HUR2X60-60 HUR2X60-60 v rsm v 600 v rrm v 600 symbol t est conditions maxim um ratings unit i frms i f a vm t c =65 o c; rectangular , d=0.5 100 60 a t vj t vjm t stg -40...+150 150 -40...+150 o c i fsm t vj =45 o c; t p =10ms (50hz), sine e as t vj =25 o c; non-repetitiv e; i as =2a; l=180uh v a =1.5 . v r typ .; f=10khz; repetitiv e 600 0.3 0.2 a mj i ar a p tot t c =25 o c 140 w typical 30 w eight g high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7 .80 8 .20 0.307 0.323 c 4 .09 4 .29 0.161 0.169 d 4 .09 4 .29 0.161 0.169 e 4 .09 4 .29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8 .92 9 .60 0.351 0.378 l 0 .76 0 .84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1 .98 2 .13 0.078 0.084 p 4 .95 5 .97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3 .94 4 .42 0.155 0.174 s 4 .72 4 .85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3 .30 4 .57 0.130 0.180 w 0.780 0.830 19.81 21.08 dimensions so t -227(iso t op) v isol 50/60hz, rms i isol <1ma 2500 v~ m d mounting torque (m4) ter minal connection torque (m4) 1.1-1.5/9-13 1.1-1.5/9-13 nm/lb .in. _
HUR2X60-60 ad v ant a ges * a v alanche v oltage r ated f or reliab le oper ation * soft re v erse reco v er y f or lo w emi/rfi * lo w i rm reduces: - p o w er dissipation within the diode - t ur n-on loss in the comm utating s witch applica tions * antipar allel diode f or high frequency s witching de vices * antisatur ation diode * sn ub ber diode * f ree wheeling diode in con v er ters and motor control circuits * rectifiers in s witch mode po w er supplies (smps) * inductiv e heating * uninterr uptib le po w er supplies (ups) * ultr asonic cleaners and w elders fea tures * inter national standard pac kage minibloc * isolation v oltage 2500 v~ * 2 independent fred in 1 pac kage * planar passiv ated chips * v er y shor t reco v er y time * extremely lo w s witching losses * lo w i rm -v alues * soft reco v er y beha viour symbol t est conditions characteristic v alues typ. max. unit t vj =25 o c; v r =v rrm t vj =150 o c; v r =v rrm 0.65 2.5 ma i r r thjc r thch 0.85 k/w t rr i f =1a; -di/dt=300a/us; v r =30v ; t vj =25 o c ns i rm v r =100v ; i f =130a; -di f /dt=100a/us; t vj =100 o c 8.3 a i f =60a; t vj =125 o c t vj =25 o c 1.48 2.01 v v f 0.1 35 high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode
HUR2X60-60 high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode 200 600 10 00 0 400 800 80 90 10 0 11 0 12 0 13 0 14 0 0. 0000 1 0 . 0001 0. 00 1 0 . 0 1 0 . 1 1 0. 0 001 0. 001 0. 0 1 0. 1 1 0 4 0 8 0 120 1 6 0 0. 0 0. 5 1. 0 1. 5 2. 0 k f t vj c -di f /d t t s k/ w 0 200 400 600 800 100 0 0 5 10 15 20 0. 0 0. 4 0. 8 1. 2 1. 6 v fr di f /d t v 200 600 100 0 0 400 800 0 20 40 60 80 1 0 0 1000 0 1000 2000 3000 4000 012 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /d t -d i f /d t a/ us a v nc a/ us a/ us t rr ns t fr a/ us us z th jc i f =120a i f = 60a i f = 30a t vj = 100 c v r = 300v t vj = 100 c i f = 60a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj = 100 c v r = 300v t vj = 100 c v r = 300v i f =120a i f = 60a i f = 30a q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt i f =120a i f = 60a i f = 30a t fr v fr fig. 7 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.3073 0.0055 2 0.3533 0.0092 3 0.0887 0.0007 4 0.1008 0.0399 t vj = 25 c t vj =150 c t vj =100 c
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